HSB100-8 semihow rev.1.0 jan 2007 preliminary ? repetitive peak off- state voltage: 600v ? r.m.s on-state current (i t(rms) =0.8a) ? average on-state current (i t(av) =0.5a) ? low on-state voltage (1.2v typ @i tm ) features HSB100-8 silicon controlled rectifier pnpn devices designed for high volume, line-powered consumer applications such as relay and lamp driver, small motor controls, gate drivers for larger thyristors and s ensing and detection circuits. supplied in and inexpensive plastic to-92 package which is readily adaptable for use in automatic insertion equipment. general description 1. k 2. g 3. a v drm = 600 v i t(rms) = 0.8a 1.cathode symbol 3.anode 2.gate absolute maximum ratings ( t a =25) symbol parameter value units v drm repetitive peak off-state voltage 600 v i t(rms) r.m.s on-state current (all conduction angles) 0.8 a i t(av) average on-state current (half sine wave : t c =74 ) 0.5 a i tsm surge on-state current (1/2 cycle, 60hz, peak, non repetitive) 10 a i 2 t circuit fusing considerations (t=8.3ms) 0.415 a 2 s p gm forward peak gate po wer dissipation (ta=25 )0 . 1 w p g(av) forward average gate power dissipation (ta=25 , t=8.3ms) 0.01 w v rgm reverse peak gate voltage 5 v i fgm forward peak gate current 1 a t stg storage temperature range -40 to +125 t j operating junction temperature -40 to +125 HSB100-8 1 2 3
HSB100-8 semihow rev.1.0 jan 2007 preliminary electrical characteristics ( t a =25 ) symbol parameter test conditions min typ max units i gt gate trigger current (1) v ak =7v, r l =100? 200 ua v gt gate trigger voltage (1) v ak =7v, r l =100? , ta=25 v ak =7v, r l =100? , ta=-40 0.8 1.2 v v v gd non trigger gate voltage v ak =12v(dc), r l =100? , t c =125 0.2 v i h holding current v ak =12v, gate open, initiating current=50ma, ta=25 ta=-40 2 2 5 10 ma ma i drm repetitive peak off-state current v ak =v drm or v rrm , t c =25 v ak =v drm or v rrm , t c =125 10 200 ua ua v tm peak on-state voltage (2) i tm =1a, peak 1.2 1.7 v (1) r gk current is not included in measurement (2) forward current applied for 1m s maximum duration, duty cycle 1% thermal characteristics symbol parameter test conditions min typ max units r th(j-c) thermal resistance junction to case 1.3 /w r th(j-a) thermal resistance junction to ambient 60 /w performance curves fig 1. HSB100-8 current derating (reference : case temperature) i t(av) average on-state current (a) tc, max allowable case temperature ( ) a=conduction angle dc case measurement point center of flat portion 180? 120? a 90? 60? a =30 ? 0 0.1 0.2 0.3 0.4 0.5 50 70 90 110 fig 2. HSB100-8 current derating (reference : ambient temperature) 20 60 80 100 120 a=conduction angle a typical printed circuit board mounting dc 180? 90? 60? a =30 ? 120? 0 0.1 0.2 0.3 0.4 40 ta, max allowable ambient temperature ( ) i t(av) average on-state current (a)
HSB100-8 semihow rev.1.0 jan 2007 preliminary package dimensions HSB100-8 (to-92) dimension table ref dimension (mm) min max a 4.43 4.83 b 4.43 4.83 c 3.46 3.96 c1 0.92 1.12 l 13.97 14.97 a 0.36 0.56 c 2.54(typ)
HSB100-8 semihow rev.1.0 jan 2007 preliminary taping dimensions ? ? ?? f1f2 ?????? 2.5 +0.2, -0.1 f ???? 5.0 +0.6, -0.2 p ???? 12.70.5 p1 ????? 3.850.5 p2 ???? 6.350.5 h0 ??? 16.00.5 h ????? 19.51 h1 ????? max27 w0 ? 6.00.5 w1 ???? 9.00.5 w ? 18.0+1.0, -0.5 w2 ????? max1.0 d0 ? 4.00.2
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